Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13600418Application Date: 2012-08-31
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Publication No.: US08765610B2Publication Date: 2014-07-01
- Inventor: Masato Shini
- Applicant: Masato Shini
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-204527 20110920
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
According to one embodiment, a method for manufacturing a semiconductor device includes forming a plurality of second core films, the second core film having a first array portion, and a second array portion which is arranged so as to be spaced at a larger second space than the first space in the first direction from the first array portion, the second space being positioned above the loop portion. The method includes processing the second film to be processed below the first array portion into a second line and space pattern which includes a second line pattern extending in the second direction, and removing the second film to be processed below the second space and the loop portion of the first film to be processed, by an etching using the second spacer film as a mask.
Public/Granted literature
- US20130230988A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-09-05
Information query
IPC分类:
