Invention Grant
- Patent Title: Double patterning process
- Patent Title (中): 双重图案化工艺
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Application No.: US13615669Application Date: 2012-09-14
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Publication No.: US08765612B2Publication Date: 2014-07-01
- Inventor: Jenn-Wei Lee , Hung-Jen Liu
- Applicant: Jenn-Wei Lee , Hung-Jen Liu
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Main IPC: H01L21/302
- IPC: H01L21/302

Abstract:
A double patterning process is described. A substrate having a first area and a second area is provided. A target layer is formed over the substrate. A patterned first photoresist layer is formed over the target layer, wherein the patterned first photoresist layer has openings and has a first thickness in the first area, and at least a portion of the patterned first photoresist layer in the second area has a second thickness less than the first thickness. A second photoresist layer is then formed covering the patterned first photoresist layer and filling in the openings.
Public/Granted literature
- US20140080305A1 DOUBLE PATTERNING PROCESS Public/Granted day:2014-03-20
Information query
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