Invention Grant
- Patent Title: Zirconium-doped tantalum oxide films
- Patent Title (中): 掺锆氧化钽薄膜
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Application No.: US13618212Application Date: 2012-09-14
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Publication No.: US08765616B2Publication Date: 2014-07-01
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/00 ; H01L21/16
Abstract:
Dielectric layers containing a zirconium-doped tantalum oxide layer, where the zirconium-doped tantalum oxide layer can be formed of one or more monolayers of tantalum oxide doped with zirconium, provide an insulating layer in a variety of structures for use in a wide range of electronic devices.
Public/Granted literature
- US20130012034A1 ZIRCONIUM-DOPED TANTALUM OXIDE FILMS Public/Granted day:2013-01-10
Information query
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