Invention Grant
- Patent Title: Dielectric ceramic composition for high-frequency use and method for producing the same, as well as dielectric ceramic for high-frequency use and method for producing the same and high-frequency circuit element using the same
- Patent Title (中): 高频用介电陶瓷组合物及其制造方法以及高频用介质陶瓷及其制造方法及使用其的高频电路元件
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Application No.: US13131119Application Date: 2009-11-25
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Publication No.: US08765621B2Publication Date: 2014-07-01
- Inventor: Takafumi Kawano , Masataka Yamanaga , Atsushi Okabe
- Applicant: Takafumi Kawano , Masataka Yamanaga , Atsushi Okabe
- Applicant Address: JP Yamaguchi
- Assignee: UBE Industries, Ltd.
- Current Assignee: UBE Industries, Ltd.
- Current Assignee Address: JP Yamaguchi
- Agency: Frommer Lawrence & Haug LLP
- Agent Ronald R. Santucci
- Priority: JP2008-299533 20081125; JP2009-081911 20090330; JP2009-081912 20090330
- International Application: PCT/JP2009/069844 WO 20091125
- International Announcement: WO2010/061842 WO 20100603
- Main IPC: C04B35/20
- IPC: C04B35/20 ; C04B35/465 ; H01P7/10 ; H01B3/12 ; C04B35/457
Abstract:
There is provided a dielectric ceramic composition for high-frequency use represented by a composition formula of a(Sn,Ti)O2-bMg2SiO4-cMgTi2O5-dMgSiO3. In the composition formula, a, b, c and d (provided that a, b, c and d are mol %) are within the following ranges: 4≦a≦37, 34≦b≦92, 2≦c≦15 and 2≦d≦15, respectively, and a+b+c+d=100. The dielectric ceramic composition for high-frequency use has a relative permittivity ∈r of 7.5-12.0, a Qm×fo value of not less than 50000 (GHz) and an absolute value of a temperature coefficient τf of resonance frequency fo of not more than 30 ppm/° C.
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