Invention Grant
- Patent Title: Process for producing semiconductive porcelain composition and heater employing semiconductive porcelain composition
- Patent Title (中): 采用半导体瓷器组成的半导体陶瓷组合物和加热器的生产方法
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Application No.: US12920366Application Date: 2009-03-12
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Publication No.: US08766145B2Publication Date: 2014-07-01
- Inventor: Takeshi Shimada , Kentaro Ino , Toshiki Kida
- Applicant: Takeshi Shimada , Kentaro Ino , Toshiki Kida
- Applicant Address: JP Tokyo
- Assignee: Hitachi Metals, Ltd.
- Current Assignee: Hitachi Metals, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Stein IP, LLC
- Priority: JPP2008-071353 20080319
- International Application: PCT/JP2009/054809 WO 20090312
- International Announcement: WO2009/116452 WO 20090924
- Main IPC: H05B3/10
- IPC: H05B3/10 ; H05B3/14 ; C04B35/468 ; C04B35/64
Abstract:
To improve jump characteristic of BaTiO3—(Bi1/2Na1/2)TiO3 material.There is provided a process for producing a semiconductive porcelain composition in which a part of Ba is substituted with Bi—Na, the process including a step of preparing a (BaQ)TiO3 calcined powder (in which Q is a semiconductor dopant), a step of preparing a (BiNa)TiO3 calcined powder, a step of mixing the (BaQ)TiO3 calcined powder and the (BiNa)TiO3 calcined powder, a step of molding and sintering the mixed calcined powder, and a step of heat-treating the obtained sintered body at 600° C. or lower; and a PCT heater employing the element prepared by the above steps.
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