Invention Grant
- Patent Title: Current limiter for high voltage power supply used with ion implantation system
- Patent Title (中): 用于离子注入系统的高压电源限流器
-
Application No.: US13187905Application Date: 2011-07-21
-
Publication No.: US08766209B2Publication Date: 2014-07-01
- Inventor: Klaus Becker , Klaus Petry , Piotr Lubicki
- Applicant: Klaus Becker , Klaus Petry , Piotr Lubicki
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J27/00
- IPC: H01J27/00
Abstract:
Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.
Public/Granted literature
- US20130020940A1 CURRENT LIMITER FOR HIGH VOLTAGE POWER SUPPLY USED WITH ION IMPLANTATION SYSTEM Public/Granted day:2013-01-24
Information query
