Invention Grant
- Patent Title: Buffer bilayers for electronic devices
- Patent Title (中): 电子设备缓冲层双层
-
Application No.: US12645634Application Date: 2009-12-23
-
Publication No.: US08766239B2Publication Date: 2014-07-01
- Inventor: Chi Zhang , Che-Hsiung Hsu
- Applicant: Chi Zhang , Che-Hsiung Hsu
- Applicant Address: US DE Wilmington
- Assignee: E I du Pont de Nemours and Company
- Current Assignee: E I du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L29/08
- IPC: H01L29/08
Abstract:
The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including at least one electrically conductive polymer doped with at least one highly-fluorinated acid polymer. The second layer is a reacted layer from a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals.
Public/Granted literature
- US20100213446A1 BUFFER BILAYERS FOR ELECTRONIC DEVICES Public/Granted day:2010-08-26
Information query
IPC分类:
