Invention Grant
- Patent Title: Semiconductor device comprising an oxide semiconductor
- Patent Title (中): 包括氧化物半导体的半导体器件
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Application No.: US13167049Application Date: 2011-06-23
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Publication No.: US08766252B2Publication Date: 2014-07-01
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-152050 20100702; JP2010-181523 20100816
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12

Abstract:
A semiconductor device having favorable electric characteristics and a manufacturing method thereof are provided. A transistor includes an oxide semiconductor layer formed over an insulating layer, a source electrode layer and a drain electrode layer which overlap with part of the oxide semiconductor layer, a gate insulating layer in contact with part of the oxide semiconductor layer, and a gate electrode layer over the gate insulating layer. In the transistor, a buffer layer having n-type conductivity is formed between the source electrode layer and the oxide semiconductor layer and between the drain electrode layer and the oxide semiconductor layer. Thus, parasitic resistance is reduced, resulting in improvement of on-state characteristics of the transistor.
Public/Granted literature
- US20120001169A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-01-05
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