Invention Grant
- Patent Title: Silicon carbide semiconductor device
- Patent Title (中): 碳化硅半导体器件
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Application No.: US13565388Application Date: 2012-08-02
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Publication No.: US08766278B2Publication Date: 2014-07-01
- Inventor: Hideki Hayashi
- Applicant: Hideki Hayashi
- Applicant Address: JP Osaka-Shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-Shi
- Agency: Venable LLP
- Agent Michael A. Sartori; F. Brock Riggs
- Priority: JP2011-171564 20110805
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/8238

Abstract:
First, second, fourth, and fifth impurity regions have a first conductivity type, and a third impurity region has a second conductivity type. The first to third impurity regions reach a first layer having the first conductivity type. The fourth and fifth impurity regions are provided on a second layer. First to fifth electrodes are provided on the first to fifth impurity regions, respectively. Electrical connection is established between the first and fifth electrodes, and between the third and fourth electrodes. A sixth electrode is provided on a gate insulating film covering a portion between the fourth and fifth impurity regions.
Public/Granted literature
- US20130032824A1 SILICON CARBIDE SEMICONDUCTOR DEVICE Public/Granted day:2013-02-07
Information query
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