A SiC-based trench-type Schottky device is disclosed. The device includes: a SiC substrate having first and second surfaces; a first contact metal formed on the second surface and configured for forming an ohmic contact on the substrate; a drift layer formed on the first surface and including a cell region and a termination region enclosing the cell region; a plurality of first trenches with a first depth formed in the cell region; a plurality of second trenches with a second depth less than the first depth; a plurality of mesas formed in the substrate, each defined between neighboring ones of the trenches; an insulating layer formed on sidewalls and bottoms of the trenches; and a second contact metal formed on the mesas and the insulating layer, extending from the cell region to the termination region, and configured for forming a Schottky contact on the mesas of the substrate.