Invention Grant
- Patent Title: Light-emitting device and method for manufacturing the same
- Patent Title (中): 发光装置及其制造方法
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Application No.: US13568399Application Date: 2012-08-07
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Publication No.: US08766293B2Publication Date: 2014-07-01
- Inventor: Jyun-De Wu , Yu-Chu Li
- Applicant: Jyun-De Wu , Yu-Chu Li
- Applicant Address: TW Tainan
- Assignee: Genesis Photonics Inc.
- Current Assignee: Genesis Photonics Inc.
- Current Assignee Address: TW Tainan
- Agency: The Webb Law Firm
- Priority: TW100128191A 20110808; CN201110255651 20110831; TW101118956A 20120528
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L33/00 ; H01L21/00

Abstract:
A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second electrode disposed above the epitaxial structure to be electrically connected to the second cladding layer through the epitaxial structure such that the external electricity is permitted to be transmitted to the light-emitting layer through the first and second electrodes. A method for manufacturing the light-emitting device is also disclosed.
Public/Granted literature
- US20130037796A1 Light-Emitting Device and Method for Manufacturing the Same Public/Granted day:2013-02-14
Information query
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