Invention Grant
- Patent Title: Light-emitting diode with a mirror protection layer
- Patent Title (中): 具有镜面保护层的发光二极管
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Application No.: US13601161Application Date: 2012-08-31
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Publication No.: US08766303B2Publication Date: 2014-07-01
- Inventor: Wei-Yu Yen , Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
- Applicant: Wei-Yu Yen , Li-Ping Chou , Fu-Bang Chen , Chih-Sung Chang
- Applicant Address: TW Taichung
- Assignee: High Power Opto. Inc.
- Current Assignee: High Power Opto. Inc.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L33/60
- IPC: H01L33/60

Abstract:
A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.
Public/Granted literature
- US20140061695A1 LIGHT-EMITTING DIODE WITH A MIRROR PROTECTION LAYER Public/Granted day:2014-03-06
Information query
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