Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
-
Application No.: US13295454Application Date: 2011-11-14
-
Publication No.: US08766331B2Publication Date: 2014-07-01
- Inventor: Souichi Okita
- Applicant: Souichi Okita
- Applicant Address: JP
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell, LLP
- Priority: JP2010-255765 20101116
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/739

Abstract:
In a semiconductor module according to certain aspects the invention, a U-terminal and an M-terminal overlap each other in a manner to reduce inductance and to further to reduce the size of snubber capacitor. In certain aspects of the invention, a P-terminal, M-terminal, N-terminal, and U-terminal are arranged such that the U-terminal, through which currents flow in and out, is arranged farthest away from control electrodes to reduce the noises superposed to control electrodes, and the P-terminal, M-terminal, N-terminal, and U-terminal are aligned to facilitate attaching external connection bars thereto. A power semiconductor module according to aspects of the invention can facilitate reducing the wiring inductance inside and outside the module, reducing the electromagnetic noises introduced into the control terminals, and attaching the external wirings to the terminals thereof simply and easily.
Public/Granted literature
- US20120119256A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2012-05-17
Information query
IPC分类: