Invention Grant
US08766336B2 Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
有权
在电连接处去除半导体的费米能级的方法以及包含这种结的装置的方法
- Patent Title: Method for depinning the fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
- Patent Title (中): 在电连接处去除半导体的费米能级的方法以及包含这种结的装置的方法
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Application No.: US13687907Application Date: 2012-11-28
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Publication No.: US08766336B2Publication Date: 2014-07-01
- Inventor: Daniel E. Grupp , Daniel J. Connelly
- Applicant: Acorn Technologies, Inc.
- Applicant Address: US CA La Jolla
- Assignee: Acorn Technologies, Inc.
- Current Assignee: Acorn Technologies, Inc.
- Current Assignee Address: US CA La Jolla
- Agency: Ascenda Law Group, PC
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
An electrical device in which an interface layer comprising arsenic is disposed between and in contact with a conductor and a semiconductor. In some cases, the interface layer may be a monolayer of arsenic.
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