Invention Grant
US08766338B2 Semiconductor device including photosensor and transistor having oxide semiconductor
有权
包括光电传感器和具有氧化物半导体的晶体管的半导体器件
- Patent Title: Semiconductor device including photosensor and transistor having oxide semiconductor
- Patent Title (中): 包括光电传感器和具有氧化物半导体的晶体管的半导体器件
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Application No.: US13039491Application Date: 2011-03-03
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Publication No.: US08766338B2Publication Date: 2014-07-01
- Inventor: Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura , Munehiro Kozuma
- Applicant: Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura , Munehiro Kozuma
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-056526 20100312
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L29/04

Abstract:
An object is to achieve low-power consumption by reducing the off-state current of a transistor in a photosensor. A semiconductor device including a photosensor having a photodiode, a first transistor, and a second transistor; and a read control circuit including a read control transistor, in which the photodiode has a function of supplying charge based on incident light to a gate of the first transistor; the first transistor has a function of storing charge supplied to its gate and converting the charge stored into an output signal; the second transistor has a function of controlling reading of the output signal; the read control transistor functions as a resistor converting the output signal into a voltage signal; and semiconductor layers of the first transistor, the second transistor, and the read control transistor are formed using an oxide semiconductor.
Public/Granted literature
- US20110220889A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-09-15
Information query
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