Invention Grant
- Patent Title: Highly efficient CMOS technology compatible silicon photoelectric multiplier
- Patent Title (中): 高效CMOS技术兼容硅光电倍增器
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Application No.: US13365348Application Date: 2012-02-03
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Publication No.: US08766339B2Publication Date: 2014-07-01
- Inventor: Masahiro Teshima , Razmik Mirzoyan , Boris Anatolievich Dolgoshein , Anatoly Pleshko
- Applicant: Masahiro Teshima , Razmik Mirzoyan , Anatoly Pleshko , Ljudmila Aseeva
- Applicant Address: DE Munich
- Assignee: Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V. Hofgartenstr. 8
- Current Assignee: Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V. Hofgartenstr. 8
- Current Assignee Address: DE Munich
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L27/144
Abstract:
The present disclosure relates to photodetectors with high efficiency of light detection, and may be used in a wide field of applications, which employ the detection of very weak and fast optical signals, such as industrial and medical tomography, life science, nuclear, particle, and/or astroparticle physics etc. A highly efficient CMOS-technology compatible Silicon Photoelectric Multiplier may comprise a substrate and a buried layer applied within the substrate. The multiplier may comprise cells with silicon strip-like quenching resistors, made by CMOS-technology, located on top of the substrate and under an insulating layer for respective cells, and separating elements may be disposed between the cells.
Public/Granted literature
- US20130181318A1 HIGHLY EFFICIENT CMOS TECHNOLOGY COMPATIBLE SILICON PHOTOELECTRIC MULTIPLIER Public/Granted day:2013-07-18
Information query
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