Invention Grant
- Patent Title: Epitaxial growth of single crystalline MgO on germanium
- Patent Title (中): 单晶MgO在锗上的外延生长
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Application No.: US12905675Application Date: 2010-10-15
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Publication No.: US08766341B2Publication Date: 2014-07-01
- Inventor: Wei Han , Yi Zhou , Kang-Lung Wang , Roland K. Kawakami
- Applicant: Wei Han , Yi Zhou , Kang-Lung Wang , Roland K. Kawakami
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/10 ; H01L29/12 ; H01L21/00
Abstract:
The embodiments disclosed herein relate to growth of magnesium-oxide on a single crystalline substrate of germanium. The embodiments further describes a method of manufacturing and crystalline structure of a FM/MgO/Ge(001) heterostructure. The embodiments further related to method of manufacturing and a crystalline structure for a high-k dielectric//MgO [100](001)//Ge[110](001) heterostructure.
Public/Granted literature
- US20110089415A1 EPITAXIAL GROWTH OF SINGLE CRYSTALLINE MGO ON GERMANIUM Public/Granted day:2011-04-21
Information query
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