Invention Grant
- Patent Title: Electroless Cu plating for enhanced self-forming barrier layers
- Patent Title (中): 用于增强自形成阻挡层的无电镀铜
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Application No.: US13425097Application Date: 2012-03-20
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Publication No.: US08766342B2Publication Date: 2014-07-01
- Inventor: Rohan N. Akolkar
- Applicant: Rohan N. Akolkar
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/48
- IPC: H01L21/48
Abstract:
Methods and an apparatus are described for an integrated circuit within which an electroless Cu plated layer having an oxygen content is formed on the top of a seed layer comprising Cu and Mn. The integrated circuit is then exposed to a sufficient high temperature to cause the self-formation of a MnSiOx barrier layer.
Public/Granted literature
- US20120175776A1 ELECTROLESS CU PLATING FOR ENHANCED SELF-FORMING BARRIER LAYERS Public/Granted day:2012-07-12
Information query
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