Invention Grant
US08766349B2 Semiconductor device having stacked array structure, NAND flash memory array using the same and fabrication thereof
有权
具有堆叠阵列结构的半导体器件，使用其的NAND闪存阵列及其制造
- Patent Title: Semiconductor device having stacked array structure, NAND flash memory array using the same and fabrication thereof
- Patent Title (中): 具有堆叠阵列结构的半导体器件，使用其的NAND闪存阵列及其制造
-
Application No.: US13383097Application Date: 2009-12-22
-
Publication No.: US08766349B2Publication Date: 2014-07-01
- Inventor: Byung Gook Park , Jang Gn Yun , Il Han Park
- Applicant: Byung Gook Park , Jang Gn Yun , Il Han Park
- Applicant Address: KR
- Assignee: Seoul National University R&DB Foundation
- Current Assignee: Seoul National University R&DB Foundation
- Current Assignee Address: KR
- Agent Gerald E. Hespos; Michael J. Porco; Matthew T. Hespos
- Priority: KR10-2009-0062653 20090709
- International Application: PCT/KR2009/007663 WO 20091222
- International Announcement: WO2011/004945 WO 20110113
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
The present invention relates to a semiconductor device, a memory array and a fabrication method thereof, and more particularly to a semiconductor device having a stacked array structure (referred to as a STAR structure: a STacked ARray structure) applicable to not only a switch device but also a memory device, a NAND flash memory array using the same as a memory device and a fabrication method thereof.
Public/Granted literature
Information query
IPC分类:
