Invention Grant
- Patent Title: Semiconductor device and method for fabricating semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13586167Application Date: 2012-08-15
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Publication No.: US08766350B2Publication Date: 2014-07-01
- Inventor: Osamu Arisumi , Toshihiko Iinuma
- Applicant: Osamu Arisumi , Toshihiko Iinuma
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-062436 20120319
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A semiconductor device according to an embodiment, includes a plurality of gate structures; a first dielectric film; and a second dielectric film. The first dielectric film crosslinks adjacent gate structures of the plurality of gate structures so as to form a cavity each above and below in a position between the adjacent gate structures. The second dielectric film is formed as if to cover the cavity above the first dielectric film between the adjacent gate structures.
Public/Granted literature
- US20130240969A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2013-09-19
Information query
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