Invention Grant
- Patent Title: Semiconductor storage device and manufacturing method of semiconductor storage device
- Patent Title (中): 半导体存储装置及半导体存储装置的制造方法
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Application No.: US13112345Application Date: 2011-05-20
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Publication No.: US08766351B2Publication Date: 2014-07-01
- Inventor: Takeshi Imamura , Yoshiaki Fukuzumi , Hideaki Aochi , Masaru Kito , Tomoko Fujiwara , Kaori Kawasaki , Ryouhei Kirisawa
- Applicant: Takeshi Imamura , Yoshiaki Fukuzumi , Hideaki Aochi , Masaru Kito , Tomoko Fujiwara , Kaori Kawasaki , Ryouhei Kirisawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-266984 20101130
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
According to one embodiment, a columnar semiconductor, a floating gate electrode formed on a side surface of the columnar semiconductor via a tunnel dielectric film, and a control gate electrode formed to surround the floating gate electrode via a block dielectric film are provided.
Public/Granted literature
- US20120132981A1 SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2012-05-31
Information query
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