Invention Grant
- Patent Title: Semiconductor devices and method of manufacturing the same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13218971Application Date: 2011-08-26
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Publication No.: US08766352B2Publication Date: 2014-07-01
- Inventor: Young Kyun Jung
- Applicant: Young Kyun Jung
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0083464 20100827
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A semiconductor device includes a pipe channel layer formed over a substrate, a first vertical channel layer formed over the pipe channel layer to couple the pipe channel layer to a bit line, a second vertical channel layer formed over the pipe channel layer to couple the pipe channel layer to a source line, a multi-layer comprising a charge trap layer and formed to surround the first vertical channel layer, the second vertical channel layer, and the pipe channel layer, an insulating barrier layer formed to surround the multi-layer, a plurality of first conductive layers formed between the pipe channel layer and the bit line, wherein the first vertical channel layer passes through the first conductive layers, and a plurality of second conductive layers formed between the pipe channel layer and the source line, wherein the second vertical layer passes through the second conductive layers.
Public/Granted literature
- US20120049267A1 SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-03-01
Information query
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