Invention Grant
- Patent Title: Tunnel field effect transistor
- Patent Title (中): 隧道场效应晶体管
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Application No.: US13558518Application Date: 2012-07-26
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Publication No.: US08766353B2Publication Date: 2014-07-01
- Inventor: Bruce B. Doris , Kangguo Cheng , Wilfried E. Haensch , Ali Khakifirooz , Isaac Lauer , Ghavam G. Shahidi
- Applicant: Bruce B. Doris , Kangguo Cheng , Wilfried E. Haensch , Ali Khakifirooz , Isaac Lauer , Ghavam G. Shahidi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent George Sai-Halasz; Louis J. Percello
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
An FET device characterized as being an asymmetrical tunnel FET (TFET) is disclosed. The TFET includes a gate-stack, a channel region underneath the gate-stack, a first and a second junction adjoining the gate-stack and being capable for electrical continuity with the channel. The first junction and the second junction are of different conductivity types. The TFET also includes spacer formations in a manner that the spacer formation on one side of the gate-stack is thinner than on the other side.
Public/Granted literature
- US20120286350A1 TUNNEL FIELD EFFECT TRANSISTOR Public/Granted day:2012-11-15
Information query
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