An apparatus comprises: a semiconductor device on a base substrate, the semiconductor device having a core metal positioned proximate a source and a drain in the base substrate; a work function metal on a portion of the core metal; a dielectric liner on a portion of the work function metal; a metal gate in electrical communication with one of the source and the drain; and an insulator film implanted into the core metal, the insulator film forming an insulative barrier across the metal gate and between the core metal and the source or the drain.