Semiconductor devices are provided. The semiconductor device includes a semiconductor substrate having a cell region and a peripheral region, first and second conductive line extending onto the semiconductor substrate to constitute a peripheral circuit, a first interlayer insulation layer on the first and second conductive lines, a first peripheral interconnection pattern on the first interlayer insulation layer of the peripheral region, a first contact plug disposed in the first interlayer insulation layer, second peripheral interconnection patterns on the second interlayer insulation layer of the peripheral region, a second contact plug disposed in the second interlayer insulation layer to electrically connect the first peripheral interconnection pattern to one of the second peripheral interconnection patterns, and a third contact plug penetrating the first and second interlayer insulation layers to electrically connect the second conductive line to another one of the second peripheral interconnection patterns.