According to one disclosed embodiment, an integrated one-time programmable (OTP) semiconductor device pair includes a split-thickness dielectric under an electrode and over an isolation region formed in a doped semiconductor substrate, where a reduced-thickness center portion of the dielectric forms, in conjunction with the isolation region, programming regions of the OTP semiconductor device pair, and where the thicker, outer portions of the dielectric form dielectrics for transistor structures. In one embodiment, the split-thickness dielectric comprises a gate dielectric. In one embodiment, multiple OTP semiconductor device pairs are formed in an array that minimizes the number of connections required to program and sense states of specific OTP cells.