Invention Grant
US08766382B2 MRAM cells including coupled free ferromagnetic layers for stabilization
有权
MRAM单元包括用于稳定的耦合的自由铁磁层
- Patent Title: MRAM cells including coupled free ferromagnetic layers for stabilization
- Patent Title (中): MRAM单元包括用于稳定的耦合的自由铁磁层
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Application No.: US13015320Application Date: 2011-01-27
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Publication No.: US08766382B2Publication Date: 2014-07-01
- Inventor: Haiwen Xi , Kaizhong Gao , Dimitar V. Dimitrov , Song S. Xue
- Applicant: Haiwen Xi , Kaizhong Gao , Dimitar V. Dimitrov , Song S. Xue
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Hall Estill Attorneys at Law
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/08 ; G11C11/16
Abstract:
A free ferromagnetic data storage layer of an MRAM cell is coupled to a free ferromagnetic stabilization layer, which stabilization layer is directly electrically coupled to a contact electrode, on one side, and is separated from the free ferromagnetic data storage layer, on an opposite side, by a spacer layer. The spacer layer provides for the coupling between the two free layers, which coupling is one of: a ferromagnetic coupling and an antiferromagnetic coupling.
Public/Granted literature
- US20110121418A1 MRAM Cells Including Coupled Free Ferromagnetic Layers for Stabilization Public/Granted day:2011-05-26
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