Invention Grant
- Patent Title: Method and system for providing a magnetic junction using half metallic ferromagnets
- Patent Title (中): 使用半金属铁磁体提供磁结的方法和系统
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Application No.: US13517731Application Date: 2012-06-14
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Publication No.: US08766383B2Publication Date: 2014-07-01
- Inventor: Dmytro Apalkov , Xueti Tang , Mohamad Towfik Krounbi , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
- Applicant: Dmytro Apalkov , Xueti Tang , Mohamad Towfik Krounbi , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Convergent Law Group LLP
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11C11/00 ; G11C11/14 ; G11C11/15
Abstract:
A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the free layer and the pinned layer include at least one half-metal.
Public/Granted literature
- US20130009260A1 Method And System For Providing A Magnetic Junction Using Half Metallic Ferromagnets Public/Granted day:2013-01-10
Information query
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