Invention Grant
US08766392B2 Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same
失效
具有浅N +层的薄活性层鱼骨光电二极管及其制造方法
- Patent Title: Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same
- Patent Title (中): 具有浅N +层的薄活性层鱼骨光电二极管及其制造方法
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Application No.: US12559498Application Date: 2009-09-15
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Publication No.: US08766392B2Publication Date: 2014-07-01
- Inventor: Peter Steven Bui , Narayan Dass Taneja
- Applicant: Peter Steven Bui , Narayan Dass Taneja
- Applicant Address: US CA Hawthorne
- Assignee: OSI Optoelectronics, Inc.
- Current Assignee: OSI Optoelectronics, Inc.
- Current Assignee Address: US CA Hawthorne
- Agency: Novel IP
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L27/146 ; H01L31/0352 ; H01L27/144
Abstract:
The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application.
Public/Granted literature
- US20100065939A1 THIN ACTIVE LAYER FISHBONE PHOTODIODE WITH A SHALLOW N+ LAYER AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-03-18
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