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US08766402B2 Inductive element with interrupter region 有权
具有断路器区域的感应元件

Inductive element with interrupter region
Abstract:
A semiconductor device structure a semiconductor substrate having a first conductivity type and a top surface. A plurality of first doped regions is at a first depth below the top surface arranged in a checkerboard fashion. The first doped regions are of a second conductivity type. A dielectric layer is over the top surface. An inductive element is over the dielectric layer, wherein the inductive element is over the first doped regions.
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