Invention Grant
- Patent Title: Inductive element with interrupter region
- Patent Title (中): 具有断路器区域的感应元件
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Application No.: US13489139Application Date: 2012-06-05
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Publication No.: US08766402B2Publication Date: 2014-07-01
- Inventor: Ertugrul Demircan , Thomas F. McNelly
- Applicant: Ertugrul Demircan , Thomas F. McNelly
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Joanna G. Chiu; James L. Clingan, Jr.
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L21/02 ; H01L29/66

Abstract:
A semiconductor device structure a semiconductor substrate having a first conductivity type and a top surface. A plurality of first doped regions is at a first depth below the top surface arranged in a checkerboard fashion. The first doped regions are of a second conductivity type. A dielectric layer is over the top surface. An inductive element is over the dielectric layer, wherein the inductive element is over the first doped regions.
Public/Granted literature
- US20130320490A1 INDUCTIVE ELEMENT WITH INTERRUPTER REGION AND METHOD FOR FORMING Public/Granted day:2013-12-05
Information query
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