Invention Grant
US08766403B2 Capacitor arrays for minimizing gradient effects and methods of forming the same
有权
用于最小化梯度效应的电容器阵列及其形成方法
- Patent Title: Capacitor arrays for minimizing gradient effects and methods of forming the same
- Patent Title (中): 用于最小化梯度效应的电容器阵列及其形成方法
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Application No.: US13366750Application Date: 2012-02-06
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Publication No.: US08766403B2Publication Date: 2014-07-01
- Inventor: Chi-Feng Huang , Chia-Chung Chen
- Applicant: Chi-Feng Huang , Chia-Chung Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L29/92
- IPC: H01L29/92

Abstract:
Semiconductor devices having capacitor arrays and methods of forming the same. A semiconductor device is formed including a capacitor array. The capacitor array includes a plurality of operational capacitors formed along a diagonal of the capacitor array. The capacitor array also includes a plurality of dummy capacitors formed substantially symmetrically about the plurality of operational capacitors in the capacitor array. A first operational capacitor is formed at a first edge of the capacitor array. Each one of the plurality of operational capacitors is electrically coupled to a non-adjacent other one of the plurality of operational capacitors.
Public/Granted literature
- US20130200489A1 CAPACITOR ARRAYS FOR MINIMIZING GRADIENT EFFECTS AND METHODS OF FORMING THE SAME Public/Granted day:2013-08-08
Information query
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