Invention Grant
- Patent Title: RF-power device
- Patent Title (中): 射频功率器件
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Application No.: US13334637Application Date: 2011-12-22
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Publication No.: US08766427B2Publication Date: 2014-07-01
- Inventor: Marnix Bernard Willemsen
- Applicant: Marnix Bernard Willemsen
- Applicant Address: NL Eindhoven
- Assignee: NXP, B.V.
- Current Assignee: NXP, B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP11150247 20110105
- Main IPC: H01L23/50
- IPC: H01L23/50 ; H03F3/68

Abstract:
An RF-power device includes a semiconductor substrate having a plurality of active regions arranged in an array. Each active region includes one or more RF-power transistors. The active regions are interspersed with inactive regions for reducing mutual heating of the RF-power transistors in separate active regions. The devices also includes at least one impedance matching component located in one of the inactive regions of the substrate.
Public/Granted literature
- US20120168840A1 RF-POWER DEVICE Public/Granted day:2012-07-05
Information query
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