Invention Grant
US08766427B2 RF-power device 失效
射频功率器件

RF-power device
Abstract:
An RF-power device includes a semiconductor substrate having a plurality of active regions arranged in an array. Each active region includes one or more RF-power transistors. The active regions are interspersed with inactive regions for reducing mutual heating of the RF-power transistors in separate active regions. The devices also includes at least one impedance matching component located in one of the inactive regions of the substrate.
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