Invention Grant
- Patent Title: Semiconductor modules and methods of formation thereof
- Patent Title (中): 半导体模块及其形成方法
-
Application No.: US13517654Application Date: 2012-06-14
-
Publication No.: US08766430B2Publication Date: 2014-07-01
- Inventor: Ralf Otremba , Davide Chiola , Erich Griebl , Fabio Brucchi
- Applicant: Ralf Otremba , Davide Chiola , Erich Griebl , Fabio Brucchi
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
In accordance with an embodiment of the present invention, a semiconductor module includes a first semiconductor device having a first plurality of leads including a first gate/base lead, a first drain/collector lead, and a first source/emitter lead. The module further includes a second semiconductor device and a circuit board. The second semiconductor device has a second plurality of leads including a second gate/base lead, a second drain/collector lead, and a second source/emitter lead. The circuit board has a plurality of mounting holes, wherein each of the first plurality of leads and the second plurality of leads is mounted into a respective one of the plurality of mounting holes. At the plurality of mounting holes, a first distance from the first gate/base lead to the second gate/base lead is different from a second distance from the first source/emitter lead to the second source/emitter lead.
Public/Granted literature
- US20130334677A1 Semiconductor Modules and Methods of Formation Thereof Public/Granted day:2013-12-19
Information query
IPC分类: