Invention Grant
US08766433B2 Electronic chip having channels through which a heat transport coolant can flow, electronic components and communication arm incorporating said chip
有权
电子芯片具有通过热传输冷却剂可以流过的通道，电子部件和结合有所述芯片的连通臂
- Patent Title: Electronic chip having channels through which a heat transport coolant can flow, electronic components and communication arm incorporating said chip
- Patent Title (中): 电子芯片具有通过热传输冷却剂可以流过的通道，电子部件和结合有所述芯片的连通臂
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Application No.: US13700918Application Date: 2011-05-31
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Publication No.: US08766433B2Publication Date: 2014-07-01
- Inventor: Yvan Avenas , Jean-Christophe Crebier , Julie Widiez , Laurent Clavelier , Kremena Vladimirova
- Applicant: Yvan Avenas , Jean-Christophe Crebier , Julie Widiez , Laurent Clavelier , Kremena Vladimirova
- Applicant Address: FR Paris FR Paris FR Grenoble
- Assignee: Commissariat a l'energie atomique et aux energies alternatives,Centre National de la Recherche Scientifique,Institut Polytechnique de Grenoble
- Current Assignee: Commissariat a l'energie atomique et aux energies alternatives,Centre National de la Recherche Scientifique,Institut Polytechnique de Grenoble
- Current Assignee Address: FR Paris FR Paris FR Grenoble
- Agency: Occhiuti & Rohlicek LLP
- Priority: FR1054315 20100602
- International Application: PCT/EP2011/058994 WO 20110531
- International Announcement: WO2011/151351 WO 20111208
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
The invention relates to an electronic chip, comprising: a semiconductor substrate (6) having an active area (8) formed by at least one P doped region and at least one N doped region which form one or more P-N junctions through which most of the useful current flows when said electronic chip is in a conductive state, and at least one channel (44) through which a heat transport coolant can flow, the channel(s) passing through at least said P or N doped region of the active area. Each channel (44) is rectilinear and passes through the substrate (6) in a direction which is collinear with a direction F to the nearest ±45°, where the direction F is perpendicular to the plane of the substrate.
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