Invention Grant
- Patent Title: Method of fabricating a semiconductor package
- Patent Title (中): 制造半导体封装的方法
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Application No.: US13660223Application Date: 2012-10-25
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Publication No.: US08766456B2Publication Date: 2014-07-01
- Inventor: Hsi-Chang Hsu , Hsin-Hung Chou , Hung-Wen Liu , Hsin-Yi Liao , Chiang-Cheng Chang
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Edwards Wildman Palmer LLP
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW101127947A 20120803
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A method of fabricating a semiconductor package is provided, including: disposing a semiconductor element on a carrier; forming an encapsulant on the carrier to encapsulant the semiconductor element; forming at least one through hole penetrating the encapsulant; forming a hollow conductive through hole in the through hole and, at the same time, forming a circuit layer on an active surface of the semiconductor element and the encapsulant; forming an insulating layer on the circuit layer; and removing the carrier. By forming the conductive through hole and the circuit layer simultaneously, the invention eliminates the need to form a dielectric layer before forming the circuit layer and dispenses with the conventional chemical mechanical polishing (CMP) process, thus greatly improving the fabrication efficiency.
Public/Granted literature
- US20140035156A1 METHOD OF FABRICATING A SEMICONDUCTOR PACKAGE Public/Granted day:2014-02-06
Information query
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