Invention Grant
- Patent Title: Fast voltage level shifter circuit
- Patent Title (中): 快速电压电平转换电路
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Application No.: US13015064Application Date: 2011-01-27
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Publication No.: US08766696B2Publication Date: 2014-07-01
- Inventor: Meir Gazit
- Applicant: Meir Gazit
- Applicant Address: IL Hod Hasharon
- Assignee: Solaredge Technologies Ltd.
- Current Assignee: Solaredge Technologies Ltd.
- Current Assignee Address: IL Hod Hasharon
- Agency: Banner & Witcoff, Ltd.
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A voltage level shifting circuit with an input terminal and an output terminal. The level shifting circuit has a field-effect transistor (FET) switch with a gate attached to the input terminal, a drain attached to the output terminal and a source attached to a current changing mechanism. The current changing mechanism includes a current mirror circuit having an output connected between the source and an electrical earth. The output of the current mirror circuit is preferably adapted to change a current flowing between the drain and the source based on an input voltage applied to the gate.
Public/Granted literature
- US20110181340A1 Fast Voltage Level Shifter Circuit Public/Granted day:2011-07-28
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