Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13598980Application Date: 2012-08-30
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Publication No.: US08766709B2Publication Date: 2014-07-01
- Inventor: Young Tae Kim
- Applicant: Young Tae Kim
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A semiconductor integrated circuit includes a first internal voltage generator including a PMOS and a first comparator, and a second internal voltage generator including an NMOS, a second comparator, and a voltage pump generator configured to provide a pumping power voltage to the second comparator. A power control circuit switchably enables an output from the first internal voltage generator during a power-on of the semiconductor integrated circuit and enables an output from the second internal voltage generator after the power-on.
Public/Granted literature
- US20140062584A1 Semiconductor Integrated Circuit Public/Granted day:2014-03-06
Information query
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