Invention Grant
- Patent Title: Through silicon via-based oscillator wafer-level-package structure and method for fabricating the same
- Patent Title (中): 通过硅通孔振荡器晶圆级封装结构及其制造方法
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Application No.: US13530199Application Date: 2012-06-22
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Publication No.: US08766734B2Publication Date: 2014-07-01
- Inventor: Chi-Chung Chang , Chih-Hung Chiu , Yen-Chi Chen , Kuan-Neng Chen , Jian-Yu Shih
- Applicant: Chi-Chung Chang , Chih-Hung Chiu , Yen-Chi Chen , Kuan-Neng Chen , Jian-Yu Shih
- Applicant Address: TW Taoyuan County
- Assignee: TXC Corporation
- Current Assignee: TXC Corporation
- Current Assignee Address: TW Taoyuan County
- Agency: Rosenberg, Klein & Lee
- Priority: TW101115206A 20120427
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50 ; H01L23/52 ; H03B1/00
Abstract:
The present invention provides a TSV-based oscillator WLP structure and a method for fabricating the same. The method of the present invention comprises steps: providing a silicon base having an oscillator unit disposed thereon; forming on the silicon base at least one package ring surrounding the oscillator unit; and disposing a silicon cap on the package ring to envelop the oscillator unit. The present invention adopts a cap and a base, which are made of the same material, to effectively overcome the problem of thermal stress occurring in a conventional sandwich package structure. Further, the present invention elaborately designs the wiring on the lower surface of the base to reduce the package size and decrease consumption of noble metals.
Public/Granted literature
- US20130285754A1 THROUGH SILICON VIA-BASED OSCILLATOR WAFER-LEVEL-PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-10-31
Information query
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