Invention Grant
- Patent Title: Electrostatic capacitance-type input device and method of manufacturing thereof
- Patent Title (中): 静电电容式输入装置及其制造方法
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Application No.: US12962043Application Date: 2010-12-07
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Publication No.: US08766935B2Publication Date: 2014-07-01
- Inventor: Mutsumi Matsuo
- Applicant: Mutsumi Matsuo
- Applicant Address: JP Aichi-Ken
- Assignee: Japan Display West, Inc.
- Current Assignee: Japan Display West, Inc.
- Current Assignee Address: JP Aichi-Ken
- Agency: K&L Gates LLP
- Priority: JPP2009-283728 20091215
- Main IPC: G06F3/041
- IPC: G06F3/041 ; G06F3/045

Abstract:
An electrostatic capacitance-type input device includes: a first translucent conductive film that configures a first electrode that extends in a first direction in an input area on a substrate and second electrodes that extend in a second direction intersecting the first direction in the input area and are disconnected in intersection portions with the first electrode; an interlayer insulating film that is formed at least in areas overlapping the intersection portions; and a second translucent conductive film that configures relay electrodes formed on the interlayer insulating film to have sheet resistance lower than that of the first translucent conductive film and electrically connecting the second electrodes disconnected in the intersection portion by being electrically connected to the second electrodes in an area in which the interlayer insulating film is not formed and a peripheral wiring extending in a peripheral area of the substrate located to the outer side of the input area.
Public/Granted literature
- US20110140266A1 ELECTROSTATIC CAPACITANCE-TYPE INPUT DEVICE AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2011-06-16
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