Invention Grant
- Patent Title: Memelectronic device
- Patent Title (中): 电子设备
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Application No.: US13424034Application Date: 2012-03-19
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Publication No.: US08767438B2Publication Date: 2014-07-01
- Inventor: Jianhua Yang , Byungjoon Choi , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
- Applicant: Jianhua Yang , Byungjoon Choi , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C7/00 ; H01L45/00 ; H01L47/00 ; H01L27/24 ; H01L21/8239
Abstract:
A memelectronic device may have a first and a second electrode spaced apart by a plurality of materials. A first material may have a memory characteristic exhibited by the first material maintaining a magnitude of an electrically controlled physical property after discontinuing an electrical stimulus on the first material. A second material may have an auxiliary characteristic.
Public/Granted literature
- US20130242637A1 Memelectronic Device Public/Granted day:2013-09-19
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