A resistance change nonvolatile memory device includes with a first electrode, a resistance change portion provided on the first electrode, and a second electrode provided on the resistance change portion. The resistance change portion is equipped with a resistance change layer provided on the first electrode and undergoing a change in resistance with an applied voltage and a stable layer provided on the resistance change layer and forming a filament. The resistance change layer and the stable layer are made of metal oxides different from each other. The oxide formation energy of the resistance change layer is higher than that of the stable layer. The resistance change layer has such a film thickness as to permit the resistance of the resistance change portion in an Off state to fall within a range determined by the film thickness.