Invention Grant
- Patent Title: Memory devices with in-bit current limiters
- Patent Title (中): 具有位电流限制器的存储器件
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Application No.: US13536602Application Date: 2012-06-28
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Publication No.: US08767449B2Publication Date: 2014-07-01
- Inventor: Matthew D. Pickett , Gilberto Medeiros Ribeiro
- Applicant: Matthew D. Pickett , Gilberto Medeiros Ribeiro
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G11C11/24
- IPC: G11C11/24 ; G11C11/39
Abstract:
A memory device includes a first conductive layer, a second conductive layer, an in-bit current limiter including a voltage controlled negative differential resistance (VC-NDR) layer in electrical contact with the first conductive layer and a memristor element in electrical contact with the VC-NDR layer and the second conductive layer. A method for programming a memory device that comprises a VC-NDR device is also provided.
Public/Granted literature
- US20140003139A1 MEMORY DEVICES WITH IN-BIT CURRENT LIMITERS Public/Granted day:2014-01-02
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