Invention Grant
- Patent Title: Memory segment accessing in a memory device
- Patent Title (中): 内存段访问存储设备
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Application No.: US13564883Application Date: 2012-08-02
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Publication No.: US08767470B2Publication Date: 2014-07-01
- Inventor: Tomoharu Tanaka
- Applicant: Tomoharu Tanaka
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/06
Abstract:
Bit lines of a memory segment are read at substantially the same time by coupling a selected memory segment and, at some of the data lines of any intervening segments, to respective data caches. The bit lines of the unselected memory segments that are not used to couple the selected segment to the data caches can be coupled to their respective source lines.
Public/Granted literature
- US20120294088A1 MEMORY SEGMENT ACCESSING IN A MEMORY DEVICE Public/Granted day:2012-11-22
Information query
