Invention Grant
US08767474B2 Nonvolatile memory device and method for controlling the same 有权
非易失性存储器件及其控制方法

  • Patent Title: Nonvolatile memory device and method for controlling the same
  • Patent Title (中): 非易失性存储器件及其控制方法
  • Application No.: US13605754
    Application Date: 2012-09-06
  • Publication No.: US08767474B2
    Publication Date: 2014-07-01
  • Inventor: Hee Bok Kang
  • Applicant: Hee Bok Kang
  • Applicant Address: KR Icheon
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Icheon
  • Priority: KR10-2012-0061787 20120608
  • Main IPC: G11C16/04
  • IPC: G11C16/04
Nonvolatile memory device and method for controlling the same
Abstract:
A nonvolatile memory device and a method for controlling the same are provided relating to a flash memory device. The nonvolatile memory device includes a page buffer configured to store program bits, an incremental step pulse program (ISPP) control unit configured to count the program bits stored in the page buffer and control ISPP levels differently depending on change of the program bits, and an ISPP driving unit configured to drive an ISPP voltage in response to an output signal of the ISPP control unit.
Public/Granted literature
Information query
Patent Agency Ranking
0/0