Invention Grant
- Patent Title: Non-volatile semiconductor storage device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US13941931Application Date: 2013-07-15
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Publication No.: US08767478B2Publication Date: 2014-07-01
- Inventor: Yasuhiro Shiino , Daisuke Kouno , Shigefumi Irieda , Kenri Nakai , Eietsu Takahashi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-167000 20090715; JP2009-275695 20091203
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
For data erase from an electrically erasable and programmable non-volatile memory cell, the following operations are performed: an erase operation to apply an erase pulse voltage to a memory cell for data erase, an erase verify operation to verify whether data erase is completed, and a step-up operation to increase the erase pulse voltage by a certain step-up voltage if data erase is not completed. A control unit controls voltages so that at least a first erase pulse voltage initially generated in the erase operation has a longer rise time than that of a second erase pulse voltage generated subsequent to the first erase pulse voltage.
Public/Granted literature
- US20130301359A1 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2013-11-14
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