A nonvolatile memory device includes a page buffer unit configured to include a plurality of page buffers coupled to the respective bit lines; a pass/fail circuit coupled to the page buffer unit and configured to perform a pass/fail check operation by comparing the amount of current, varying according to verify data stored in the plurality of page buffers, with an amount of reference current corresponding to the number of allowed error correction code bits; and a masking circuit configured to preclude the pass/fail check operation by coupling a ground terminal to sense nodes coupled to the remaining page buffers, respectively, other than page buffers corresponding to column addresses having the identical upper bits as an input column address.