Invention Grant
- Patent Title: Semiconductor memory device for improving repair efficiency
- Patent Title (中): 半导体存储器件，用于提高修复效率
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Application No.: US13412982Application Date: 2012-03-06
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Publication No.: US08767489B2Publication Date: 2014-07-01
- Inventor: Myung Hwan Lee , Shin Ho Chu
- Applicant: Myung Hwan Lee , Shin Ho Chu
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0033431 20110411
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C17/16
Abstract:
A semiconductor memory device includes a transmission line configured to transmit a fuse enable signal for performance of a repair operation; a first repair enable signal generation unit configured to receive the fuse enable signal through the transmission line and generate a first repair enable signal for performing a repair operation for a first bank; and a second repair enable signal generation unit configured to receive the fuse enable signal through the transmission line and generate a second repair enable signal for performing a repair operation for a second bank.
Public/Granted literature
- US20120257468A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-10-11
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