Invention Grant
US08767497B2 Semiconductor device performing self refresh operation 有权
执行自刷新操作的半导体器件

Semiconductor device performing self refresh operation
Abstract:
When refresh activation signals (REFACT0 to REFACT3) are supplied, the internal memory cells in two or more memory banks (0 to 3) are refreshed. A refresh control circuit performs a first refresh control operation to activate a refresh operation in all of the memory banks when an auto refresh command is supplied, and performs a second refresh control operation to activate a refresh operation in a part of the memory banks when a self refresh command is supplied.
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