Invention Grant
- Patent Title: Method for electrically pumped semiconductor evanescent laser
- Patent Title (中): 电泵浦半导体ev逝激光的方法
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Application No.: US13838932Application Date: 2013-03-15
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Publication No.: US08767792B2Publication Date: 2014-07-01
- Inventor: John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
- Applicant: John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01S3/091
- IPC: H01S3/091 ; H01S3/094

Abstract:
Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.
Public/Granted literature
- US20130195137A1 METHOD FOR ELECTRICALLY PUMPED SEMICONDUCTOR EVANESCENT LASER Public/Granted day:2013-08-01
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