Invention Grant
- Patent Title: Terahertz interaction circuit with open cavity portion
- Patent Title (中): 太赫兹相互作用电路与开放空腔部分
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Application No.: US13401304Application Date: 2012-02-21
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Publication No.: US08768115B2Publication Date: 2014-07-01
- Inventor: Chan-wook Baik , Ho-young Ahn
- Applicant: Chan-wook Baik , Ho-young Ahn
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2011-0084060 20110823
- Main IPC: G02B6/12
- IPC: G02B6/12 ; H01J25/24 ; H01P3/20 ; B23K31/02
Abstract:
A terahertz interaction circuit includes a waveguide through which electromagnetic waves pass, the waveguide having a folded shape and including a narrow open cavity portion; and an electron beam tunnel through which an electron beam passes, the electron beam tunnel penetrating through the waveguide.
Public/Granted literature
- US20130051724A1 TERAHERTZ INTERACTION CIRCUIT Public/Granted day:2013-02-28
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